ISO 12406:2010

Published (Edition 1, 2010)

This publication was last reviewed and confirmed in 2021. Therefore this version remains current.

ISO 12406:2010

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Abstract

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 10¹⁶ atoms/cm³ and 2,5 x 10²¹ atoms/cm³, and to crater depths of 50 nm or deeper.

General information

Status
: Published

Publication date
: 2010-11

Stage
: International Standard confirmed [90.93]
Edition
: 1

Number of pages
: 13
Technical Committee :
ISO/TC 201/SC 6

ICS :
71.040.40
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