Reference number
ISO 17560:2014
International Standard
ISO 17560:2014
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Edition 2
2014-09
Read sample
ISO 17560:2014
65114
Published (Edition 2, 2014)
This publication was last reviewed and confirmed in 2020. Therefore this version remains current.

ISO 17560:2014

ISO 17560:2014
65114
Language
Format
CHF 63
Convert Swiss francs (CHF) to your currency

Abstract

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

General information

  •  : Published
     : 2014-09
    : International Standard confirmed [90.93]
  •  : 2
     : 10
  • ISO/TC 201/SC 6
    71.040.40 
  • RSS updates

Got a question?

Check out our Help and Support