ISO 23812:2009

Published (Edition 1, 2009)

This publication was last reviewed and confirmed in 2020. Therefore this version remains current.

ISO 23812:2009

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Abstract

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

General information

Status
: Published

Publication date
: 2009-04

Stage
: International Standard confirmed [90.93]
Edition
: 1

Number of pages
: 19
Technical Committee :
ISO/TC 201/SC 6

ICS :
71.040.40
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