Reference number
ISO 23812:2009
ISO 23812:2009
© ISO 2024
International Standard
ISO 23812:2009
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
Edition 1
2009-04
2009-04
ISO 23812:2009
41867
Published
(Edition 1, 2009)
This publication was last reviewed and confirmed in 2020.
Therefore this version remains current.
Abstract
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
General information
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Status: PublishedPublication date: 2009-04Stage: International Standard confirmed [90.93]
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Edition: 1Number of pages: 19
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Technical Committee :ISO/TC 201/SC 6ICS :71.040.40
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